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Room-temperature photoluminescence and electroluminescence properties of sputter-grown gallium nitride doped with europium

Identifieur interne : 00A506 ( Main/Repository ); précédent : 00A505; suivant : 00A507

Room-temperature photoluminescence and electroluminescence properties of sputter-grown gallium nitride doped with europium

Auteurs : RBID : Pascal:04-0182139

Descripteurs français

Pascal (Inist)
- 7866F, 7855C, 8115C, 7860F, 8105E, 7960B, 7155E, Etude expérimentale, Gallium composé, Europium, Semiconducteur III-V, Semiconducteur bande interdite large, Couche mince semiconductrice, Croissance semiconducteur, Dépôt pulvérisation, Transfert radiatif, Etat fondamental, Electroluminescence, Spectre photoélectron RX, Photoluminescence.

English descriptors

KwdEn :
- Electroluminescence, Europium, Experimental study, Gallium compounds, Ground states, III-V semiconductors, Photoluminescence, Radiative transfer, Semiconductor growth, Semiconductor thin films, Sputter deposition, Wide band gap semiconductors, X-ray photoelectron spectra.

Abstract

We have studied the room-temperature photoluminescence (PL) and electroluminescence (EL) properties of europium (Eu)-doped gallium nitride (GaN) thin films grown by radio frequency planar magnetron cosputter deposition. X-ray photoelectron core level spectra collected for Eu 4d revealed that the Eu ions in the GaN host were mainly in the trivalent state. A series of PL peaks were observed in the region of 530-700 nm, with the most intense peak at 614 nm. They were assigned to the radiative transitions between the 4f⁶ energy levels of the Eu³⁺ ion, specifically ⁵D_J→⁷F_J′ (J=0,1;J^′=1,2,3,4). The maximum PL intensity was obtained at a Eu concentration of ∼1.8 at.%. Electroluminescent devices were fabricated with an Al electrode, Eu-doped GaN light-emitting layer, Al₂O₃-TiO₂ dielectric layer over an indium-tin-oxide electrode on a Corning 7059 glass substrate. The EL emission spectra from the fabricated devices were almost identical to the PL spectra. Higher electron energies (higher applied voltages) were needed to excite Eu³⁺ ground-state electrons into the higher-lying ⁵D₁ state, which is consistent with the EL excitation mechanism being direct impact by hot electrons. © 2004 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Kim, Joo Han" uniqKey="Kim J">Joo Han Kim</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Logic Technology Development, INTEL Corporation, Hillsboro, Oregon 97124</s1>
<sZ>1 aut.</sZ>
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<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Oregon</region>
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<wicri:cityArea>Logic Technology Development, INTEL Corporation, Hillsboro</wicri:cityArea>
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<author><name sortKey="Holloway, Paul H" uniqKey="Holloway P">Paul H. Holloway</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400</s1>
<sZ>2 aut.</sZ>
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<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Floride</region>
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<wicri:cityArea>Department of Materials Science and Engineering, University of Florida, Gainesville</wicri:cityArea>
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<affiliation wicri:level="2"><inist:fA14 i1="03"><s1>MICROFABRITECH, University of Florida, Gainesville, Florida 32608</s1>
<sZ>2 aut.</sZ>
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<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Floride</region>
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<wicri:cityArea>MICROFABRITECH, University of Florida, Gainesville</wicri:cityArea>
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<publicationStmt><idno type="inist">04-0182139</idno>
<date when="2004-05-01">2004-05-01</date>
<idno type="stanalyst">PASCAL 04-0182139 AIP</idno>
<idno type="RBID">Pascal:04-0182139</idno>
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<seriesStmt><idno type="ISSN">0021-8979</idno>
<title level="j" type="abbreviated">J. appl. phys.</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electroluminescence</term>
<term>Europium</term>
<term>Experimental study</term>
<term>Gallium compounds</term>
<term>Ground states</term>
<term>III-V semiconductors</term>
<term>Photoluminescence</term>
<term>Radiative transfer</term>
<term>Semiconductor growth</term>
<term>Semiconductor thin films</term>
<term>Sputter deposition</term>
<term>Wide band gap semiconductors</term>
<term>X-ray photoelectron spectra</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>7866F</term>
<term>7855C</term>
<term>8115C</term>
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<term>8105E</term>
<term>7960B</term>
<term>7155E</term>
<term>Etude expérimentale</term>
<term>Gallium composé</term>
<term>Europium</term>
<term>Semiconducteur III-V</term>
<term>Semiconducteur bande interdite large</term>
<term>Couche mince semiconductrice</term>
<term>Croissance semiconducteur</term>
<term>Dépôt pulvérisation</term>
<term>Transfert radiatif</term>
<term>Etat fondamental</term>
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<front><div type="abstract" xml:lang="en">We have studied the room-temperature photoluminescence (PL) and electroluminescence (EL) properties of europium (Eu)-doped gallium nitride (GaN) thin films grown by radio frequency planar magnetron cosputter deposition. X-ray photoelectron core level spectra collected for Eu 4d revealed that the Eu ions in the GaN host were mainly in the trivalent state. A series of PL peaks were observed in the region of 530-700 nm, with the most intense peak at 614 nm. They were assigned to the radiative transitions between the 4f<sup>6</sup>
 energy levels of the Eu<sup>3+</sup>
 ion, specifically <sup>5</sup>
D<sub>J</sub>
→<sup>7</sup>
F<sub>J′</sub>
 (J=0,1;J<sup>′</sup>
=1,2,3,4). The maximum PL intensity was obtained at a Eu concentration of ∼1.8 at.%. Electroluminescent devices were fabricated with an Al electrode, Eu-doped GaN light-emitting layer, Al<sub>2</sub>
O<sub>3</sub>
-TiO<sub>2</sub>
 dielectric layer over an indium-tin-oxide electrode on a Corning 7059 glass substrate. The EL emission spectra from the fabricated devices were almost identical to the PL spectra. Higher electron energies (higher applied voltages) were needed to excite Eu<sup>3+</sup>
 ground-state electrons into the higher-lying <sup>5</sup>
D<sub>1</sub>
 state, which is consistent with the EL excitation mechanism being direct impact by hot electrons. © 2004 American Institute of Physics.</div>
</front>
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<fA11 i1="01" i2="1"><s1>KIM (Joo Han)</s1>
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<fA11 i1="02" i2="1"><s1>HOLLOWAY (Paul H.)</s1>
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<fA14 i1="01"><s1>Logic Technology Development, INTEL Corporation, Hillsboro, Oregon 97124</s1>
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<fA14 i1="02"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400</s1>
<sZ>2 aut.</sZ>
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<fA14 i1="03"><s1>MICROFABRITECH, University of Florida, Gainesville, Florida 32608</s1>
<sZ>2 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>We have studied the room-temperature photoluminescence (PL) and electroluminescence (EL) properties of europium (Eu)-doped gallium nitride (GaN) thin films grown by radio frequency planar magnetron cosputter deposition. X-ray photoelectron core level spectra collected for Eu 4d revealed that the Eu ions in the GaN host were mainly in the trivalent state. A series of PL peaks were observed in the region of 530-700 nm, with the most intense peak at 614 nm. They were assigned to the radiative transitions between the 4f<sup>6</sup>
 energy levels of the Eu<sup>3+</sup>
 ion, specifically <sup>5</sup>
D<sub>J</sub>
→<sup>7</sup>
F<sub>J′</sub>
 (J=0,1;J<sup>′</sup>
=1,2,3,4). The maximum PL intensity was obtained at a Eu concentration of ∼1.8 at.%. Electroluminescent devices were fabricated with an Al electrode, Eu-doped GaN light-emitting layer, Al<sub>2</sub>
O<sub>3</sub>
-TiO<sub>2</sub>
 dielectric layer over an indium-tin-oxide electrode on a Corning 7059 glass substrate. The EL emission spectra from the fabricated devices were almost identical to the PL spectra. Higher electron energies (higher applied voltages) were needed to excite Eu<sup>3+</sup>
 ground-state electrons into the higher-lying <sup>5</sup>
D<sub>1</sub>
 state, which is consistent with the EL excitation mechanism being direct impact by hot electrons. © 2004 American Institute of Physics.</s0>
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<fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor growth</s0>
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<fC03 i1="15" i2="3" l="FRE"><s0>Dépôt pulvérisation</s0>
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Room-temperature photoluminescence and electroluminescence properties of sputter-grown gallium nitride doped with europium

Room-temperature photoluminescence and electroluminescence properties of sputter-grown gallium nitride doped with europium

Descripteurs français

English descriptors

Abstract

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